Coexistence of Filamentary and Homogeneous Resistive...

Advanced Materials 2010 Vol. 22; Iss. 43

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

Ruth Muenstermann, Tobias Menke, Regina Dittmann, Rainer Waser
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Volume:
22
Year:
2010
Language:
english
Pages:
4
DOI:
10.1002/adma.201001872
File:
PDF, 453 KB
english, 2010
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