Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gases
E. Gogolides, S. Grigoropoulos, A.G. NassiopoulosVolume:
27
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0167-9317(94)00143-i
File:
PDF, 1.59 MB
english, 1995