180nm gate-length HEMTs using complete x-ray lithography...

Microelectronic Engineering 1994 Vol. 23; Iss. 1-4

180nm gate-length HEMTs using complete x-ray lithography processing

A.M. Haghiri-Gosnet, H. Lafontaine, Y. Jin, F. Rousseaux, D. Decanini, F. Carcenac, M.F. Ravet, V. Thierry-Mieg, M. Chaker, H. Pépin, H. Launois
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Volume:
23
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0167-9317(94)90147-3
File:
PDF, 428 KB
english, 1994
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