Silylated positive tone resists for EUV lithography at 14...

Microelectronic Engineering 1994 Vol. 23; Iss. 1-4

Silylated positive tone resists for EUV lithography at 14 nm

G.N. Taylor, R.S. Hutton, S.M. Stein, C.H. Boyce, B. La Fontaine, A.A. MacDowell, O.R. Wood II, D.R. Wheeler, G.D. Kubiak
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Volume:
23
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0167-9317(94)90155-4
File:
PDF, 243 KB
english, 1994
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