Charge trapping and interface state generation in 6H-SiC MOS structures
V.V. Afanas'ev, M. Bassler, G. Pensl, M.J. SchulzVolume:
28
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0167-9317(95)00042-7
File:
PDF, 353 KB
english, 1995