A 0.10 μm NMOSFET, made by hybrid lithography (e-beam/DUV), with Indium pocket and specific gate reoxidation process
F. Benistant, S. Tedesco, G. Guegan, F. Martin, M. Heitzmann, B. Dal'ZottoVolume:
30
Year:
1996
Language:
english
Pages:
4
DOI:
10.1016/0167-9317(95)00287-1
File:
PDF, 1.01 MB
english, 1996