Defects at the Si/SiO2 interface: Their nature and...

Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress

W. Füssel, M. Schmidt, H. Angermann, G. Mende, H. Flietner
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Volume:
377
Year:
1996
Language:
english
Pages:
7
DOI:
10.1016/0168-9002(96)00205-7
File:
PDF, 501 KB
english, 1996
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