Investigation of growth mechanism of GaAs in molecular beam...

Applied Surface Science 1992 Vol. 60-61; Iss. none

Investigation of growth mechanism of GaAs in molecular beam epitaxy with atomic hydrogen irradiation

Takeyoshi Sugaya, Yoshitaka Okada, Mitsuo Kawabe
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Volume:
60-61
Year:
1992
Language:
english
Pages:
5
DOI:
10.1016/0169-4332(92)90425-w
File:
PDF, 232 KB
english, 1992
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