Fabrication process and properties of InGaAs wires having...

Fabrication process and properties of InGaAs wires having Si interface control layers for removal of Fermi level pinning

H. Fujikura, H. Tomozawa, M. Akazawa, H. Hasegawa
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Volume:
60-61
Year:
1992
Language:
english
Pages:
8
DOI:
10.1016/0169-4332(92)90500-w
File:
PDF, 1.26 MB
english, 1992
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