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Fabrication process and properties of InGaAs wires having Si interface control layers for removal of Fermi level pinning
H. Fujikura, H. Tomozawa, M. Akazawa, H. HasegawaVolume:
60-61
Year:
1992
Language:
english
Pages:
8
DOI:
10.1016/0169-4332(92)90500-w
File:
PDF, 1.26 MB
english, 1992