Characterization of the buffer layer in SiC heteroepitaxy

Applied Surface Science 1993 Vol. 68; Iss. 4

Characterization of the buffer layer in SiC heteroepitaxy

N. Bécourt, B. Cros, J.L. Ponthenier, R. Berjoan, A.M. Papon, C. Jaussaud
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Volume:
68
Year:
1993
Language:
english
Pages:
6
DOI:
10.1016/0169-4332(93)90227-3
File:
PDF, 359 KB
english, 1993
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