Interface transient layer of amorphous silicon based...

Interface transient layer of amorphous silicon based multilayers measured by in situ ellipsometry

Y. Hatanaka, M. Ohkuwa, T. Yamaguchi
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Volume:
65-66
Year:
1993
Language:
english
Pages:
4
DOI:
10.1016/0169-4332(93)90710-s
File:
PDF, 291 KB
english, 1993
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