Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy...

Applied Surface Science 1994 Vol. 79-80; Iss. none

Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor deposition

Takayuki Oshima, Masashi Sano, Akira Yamada, Makoto Konagai, Kiyoshi Takahashi
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Volume:
79-80
Year:
1994
Language:
english
Pages:
5
DOI:
10.1016/0169-4332(94)90412-x
File:
PDF, 284 KB
english, 1994
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