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Growth of Zn δ-doped AlxGa1−xAs (x = 0–0.65) by low pressure metal organic vapour phase epitaxy
G. Li, C. JagadishVolume:
92
Year:
1996
Language:
english
Pages:
4
DOI:
10.1016/0169-4332(95)00217-0
File:
PDF, 303 KB
english, 1996