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Dopant activation and strain relaxation in P-implanted metastable pseudomorphic Ge0.12Si0.88 grown on Si(100)
D.Y.C. Lie, N.D. Theodore, J.H. SongVolume:
92
Year:
1996
Language:
english
Pages:
9
DOI:
10.1016/0169-4332(95)00295-2
File:
PDF, 802 KB
english, 1996