Atomically flat, ultrathin-SiO2/Si(001)interface formation...

Applied Surface Science 1996 Vol. 100-101; Iss. none

Atomically flat, ultrathin-SiO2/Si(001)interface formation by UHV heating

Masaaki Niwa, Kenji Okada, Robert Sinclair
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Volume:
100-101
Year:
1996
Language:
english
Pages:
6
DOI:
10.1016/0169-4332(96)00313-3
File:
PDF, 607 KB
english, 1996
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