Vacancy-oxygen defects in silicon: the impact of isovalent doping
Londos, C. A., Sgourou, E. N., Hall, D., Chroneos, A.Volume:
25
Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-014-1947-6
Date:
June, 2014
File:
PDF, 1.48 MB
english, 2014