Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy
Romero, O.S., Aragon, A.A., Rahimi, N., Shima, D., Addamane, S., Rotter, T.J., Mukherjee, S. D., Dawson, L.R., Lester, L.F., Balakrishnan, G.Volume:
43
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-014-3070-0
Date:
April, 2014
File:
PDF, 860 KB
english, 2014