Incorporation and Activation of Arsenic Dopant in...

Journal of Electronic Materials 2014 / 08 Vol. 43; Iss. 8

Incorporation and Activation of Arsenic Dopant in Single-Crystal CdTe Grown on Si by Molecular Beam Epitaxy

Park, J.H., Farrell, S., Kodama, R., Blissett, C., Wang, X., Colegrove, E., Metzger, W.K., Gessert, T.A., Sivananthan, S.
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Volume:
43
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-014-3173-7
Date:
August, 2014
File:
PDF, 1.45 MB
english, 2014
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