Defects Study in HgxCd1−xTe Infrared Photodetectors by Deep...

Journal of Electronic Materials 2014 / 08 Vol. 43; Iss. 8

Defects Study in HgxCd1−xTe Infrared Photodetectors by Deep Level Transient Spectroscopy

Rubaldo, Laurent, Brunner, Alexandre, Berthoz, Jocelyn, Péré-Laperne, N., Kerlain, A., Abraham, P., Bauza, D., Reimbold, G., Gravrand, Olivier
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Volume:
43
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-014-3226-y
Date:
August, 2014
File:
PDF, 1.55 MB
english, 2014
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