Evaluation of the effective threshold energy of the...

Russian Microelectronics 2014 / 05 Vol. 43; Iss. 3

Evaluation of the effective threshold energy of the Interband impact ionization in a deep-submicron siliconn-channel MOS transistor

Borzdov, V. M., Borzdov, A. V., Speransky, D. S., V’yurkov, V. V., Orlikovsky, A. A.
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Volume:
43
Language:
english
Journal:
Russian Microelectronics
DOI:
10.1134/S1063739714010028
Date:
May, 2014
File:
PDF, 369 KB
english, 2014
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