Modification of the electronic structure and formation of...

Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces

Benemanskaya, G. V., Timoshnev, S. N., Ivanov, S. V., Frank-Kamenetskaya, G. E., Marchenko, D. E., Iluridze, G. N.
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Volume:
118
Language:
english
Journal:
Journal of Experimental and Theoretical Physics
DOI:
10.1134/S1063776114040098
Date:
April, 2014
File:
PDF, 287 KB
english, 2014
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