Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction
Tsai, Jung-Hui, Lee, Ching-Sung, Jhou, Jia-Cing, Wu, You-Ren, Chiang, Chung-Cheng, Chao, Yi-Ting, Liu, Wen-ChauVolume:
47
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613100278
Date:
October, 2013
File:
PDF, 243 KB
english, 2013