Formation of two-layer composite-on-insulator structures based on porous silicon and SnOx. Study of their electrical and gas-sensing properties
Bolotov, V. V., Roslikov, V. E., Roslikova, E. A., Ivlev, K. E., Knyazev, E. V., Davletkildeev, N. A.Volume:
48
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782614030063
Date:
March, 2014
File:
PDF, 1.73 MB
english, 2014