On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate
Romanov, V. V., Baidakova, M. V., Moiseev, K. D.Volume:
48
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782614060220
Date:
June, 2014
File:
PDF, 170 KB
english, 2014