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Improved 4H-SiC metal oxide semiconductor interface produced by using an oxidized SiN gate oxide that had undergone post-oxidation annealing
Moon, Jeong Hyun, Bahng, Wook, Kang, In Ho, Kim, Sang Cheol, Na, Moon Geong, Kim, Nam-KyunVolume:
64
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.64.1363
Date:
May, 2014
File:
PDF, 1.19 MB
english, 2014