Microtrenching-free two-step reactive ion etching of 4H-SiC...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2014 / 05 Vol. 32; Iss. 3

Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O2 and Cl2/O2

Tseng, Yuan-Hung, Tsui, Bing-Yue
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Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.4867355
Date:
May, 2014
File:
PDF, 2.60 MB
english, 2014
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