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[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Approach to the silicon limit: Advanced NLDMOS in 0.13 μm SOI technology for automotive and industrial applications up to 110V
Hongning Yang,, Jiangkai Zuo,, Zhihong Zhang,, Wongi Min,, Xin Lin,, Xu Cheng,, Muh-Ling Ger,, Hui, Paul, Rodriquez, PeteYear:
2013
Language:
english
DOI:
10.1109/ispsd.2013.6694421
File:
PDF, 873 KB
english, 2013