Read and Pass Disturbance in the Programmed States of...

IEEE Transactions on Electron Devices 2013 / 07 Vol. 60; Iss. 7

Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High-$\kappa$ Interpoly Gate Dielectric Stacks

Tang, Baojun, Robinson, Colin, Zhang, Wei Dong, Zhang, Jian Fu, Degraeve, Robin, Blomme, Pieter, Toledano-Luque, Maria, Van den bosch, Geert, Govoreanu, Bogdan, Van Houdt, Jan
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2013.2264163
Date:
July, 2013
File:
PDF, 1.15 MB
english, 2013
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