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Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure
Cheng, Chun-Hu, Chou, K.I., Zheng, Zhi-Wei, Hsu, Hsiao-HsuanVolume:
14
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2013.10.019
Date:
January, 2014
File:
PDF, 501 KB
english, 2014