![](/img/cover-not-exists.png)
The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes
Pamulapati, J., Lai, R., Ng, G. I., Chen, Y. C., Berger, P. R., Bhattacharya, P. K., Singh, J., Pavlidis, D.Volume:
68
Year:
1990
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.347140
File:
PDF, 642 KB
english, 1990