The relation of the performance characteristics of...

The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes

Pamulapati, J., Lai, R., Ng, G. I., Chen, Y. C., Berger, P. R., Bhattacharya, P. K., Singh, J., Pavlidis, D.
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Volume:
68
Year:
1990
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.347140
File:
PDF, 642 KB
english, 1990
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