Photo-Electrochemical Gate Recess Etching for the...

Japanese Journal of Applied Physics 2001 / 3 Vol. 40; Iss. Part 2, No

Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor

Lee, Jae-Seung, Kim, Jong-Wook, Jung, Doo-Chan, Kim, Chang-Seok, Lee, Won-Sang, Lee, Jae-Hak, Shin, Jin-Ho, Shin, Moo-Whan, Oh, Jae-Eung, Lee, Jung-Hee
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Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.40.l198
Date:
March, 2001
File:
PDF, 540 KB
english, 2001
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