Point defects in 4H–SiC epilayers introduced by neutron...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2014 / 05 Vol. 327

Point defects in 4H–SiC epilayers introduced by neutron irradiation

Hazdra, Pavel, Záhlava, Vít, Vobecký, Jan
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Volume:
327
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DOI:
10.1016/j.nimb.2013.09.051
Date:
May, 2014
File:
PDF, 559 KB
english, 2014
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