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Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation
Parisini, A., Nipoti, R.Volume:
114
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4852515
Date:
December, 2013
File:
PDF, 1.41 MB
english, 2013