[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - 3.3kV SiC MOSFETs designed for low on-resistance and fast switching
Bolotnikov, Alexander, Losee, Peter, Matocha, Kevin, Glaser, John, Nasadoski, Jefrey, Wang, Lei, Elasser, Ahmed, Arthur, Steven, Stum, Zachary, Sandvik, Peter, Sui, Yang, Johnson, Tammy, Sabate, Juan,Year:
2012
Language:
english
DOI:
10.1109/ispsd.2012.6229103
File:
PDF, 1.21 MB
english, 2012