Characteristics of GaN-based LEDs using Ga-doped or...

Journal of Crystal Growth 2014 / 2 Vol. 387

Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition

Yen, Kuo-Yi, Chiu, Chien-Hua, Hsiao, Chi-Ying, Li, Chun-Wei, Chou, Chien-Hua, Lo, Ko-Ying, Chen, Tzu-Pei, Lin, Chu-Hsien, Lin, Tai-Yuan, Gong, Jyh-Rong
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Volume:
387
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2013.10.042
Date:
February, 2014
File:
PDF, 1.28 MB
english, 2014
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