[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - TCAD predictions of linear and saturation HCS degradation in STI-based LDMOS transistors stressed in the impact-ionization regime

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