Growth of a Ge layer on 8in. Si (100) substrates by rapid...

Materials Science in Semiconductor Processing 2014 / 05 Vol. 21

Growth of a Ge layer on 8in. Si (100) substrates by rapid thermal chemical vapor deposition

Kil, Yeon-Ho, Yang, Jong-Han, Kang, Sukill, Kim, Dae-Jung, Jeong, Tae Soo, Choi, Chel-Jong, Kim, Taek Sung, Shim, Kyu-Hwan
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Volume:
21
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2014.01.038
Date:
May, 2014
File:
PDF, 2.43 MB
english, 2014
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