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[IEEE [1993] 5th International Symposium on Power Semiconductor Devices and ICs - Monterey, CA, USA (18-20 May 1993)] [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs - Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors
Merchant, S., Arnold, E., Baumgart, H., Egloff, R., Letavic, T., Mukherjee, S., Pein, H.Year:
1993
Language:
english
DOI:
10.1109/ispsd.1993.297121
File:
PDF, 382 KB
english, 1993