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Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
Sasaki, Kohei, Higashiwaki, Masataka, Kuramata, Akito, Masui, Takekazu, Yamakoshi, ShigenobuVolume:
392
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2014.02.002
Date:
April, 2014
File:
PDF, 937 KB
english, 2014