High photoluminescence efficiency of InAs/InP...

Semiconductor Science and Technology 1998 / 01 Vol. 13; Iss. 1

High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5 -

Lambert, B, Corre, A Le, Drouot, V, L'Haridon, H, Loualiche, S
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Volume:
13
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/13/1/001
Date:
January, 1998
File:
PDF, 81 KB
english, 1998
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