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A Novel High-Efficiency Gate Drive Circuit for Normally Off-Type GaN FET
Umegami, Hirokatsu, Hattori, Fumiya, Nozaki, Yu, Yamamoto, Masayoshi, Machida, OsamuVolume:
50
Language:
english
Journal:
IEEE Transactions on Industry Applications
DOI:
10.1109/tia.2013.2267512
Date:
January, 2014
File:
PDF, 1.13 MB
english, 2014