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[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 200V superjunction lateral IGBT fabricated on partial SOI
Tee, E. Kho Ching, Hoelke, A., Pilkington, S., Pal, D. K., Antoniou, M., Udrea, F., bin Wan Zainal Abidin, Wan Azlan, Ng Liang Yew,Year:
2013
Language:
english
DOI:
10.1109/ispsd.2013.6694427
File:
PDF, 1.12 MB
english, 2013