Top-seeded solution growth of three-inch-diameter 4H-SiC...

Journal of Crystal Growth 2014 / 06 Vol. 395

Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

Kusunoki, Kazuhiko, Okada, Nobuhiro, Kamei, Kazuhito, Moriguchi, Koji, Daikoku, Hironori, Kado, Motohisa, Sakamoto, Hidemitsu, Bessho, Takeshi, Ujihara, Toru
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Volume:
395
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2014.03.006
Date:
June, 2014
File:
PDF, 4.85 MB
english, 2014
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