InAlAs–InGaAs Double-Gate HEMTs on Transferred...

IEEE Electron Device Letters 2004 / 06 Vol. 25; Iss. 6

InAlAs–InGaAs Double-Gate HEMTs on Transferred Substrate

Wichmann, N., Duszynski, I., Wallart, X., Bollaert, S., Cappy, A.
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Volume:
25
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2004.829029
Date:
June, 2004
File:
PDF, 154 KB
english, 2004
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