A $G$ -Band Four-Element Butler Matrix in 0.13...

IEEE Journal of Solid-State Circuits 2014 / 9 Vol. 49; Iss. 9

A $G$ -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology

Elkhouly, Mohamed, Mao, Yanfei, Meliani, Chafik, Scheytt, J. Christoph, Ellinger, Frank
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Volume:
49
Language:
english
Journal:
IEEE Journal of Solid-State Circuits
DOI:
10.1109/JSSC.2014.2317147
Date:
September, 2014
File:
PDF, 2.62 MB
english, 2014
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