InxAl1-xN/AlN/GaN High Electron Mobility Transistor...

ECS Journal of Solid State Science and Technology 2014 / 03 Vol. 3; Iss. 5

InxAl1-xN/AlN/GaN High Electron Mobility Transistor Structures on 200 mm Diameter Si(111) Substrates with Au-Free Device Processing

Tripathy, S., Kyaw, L. M., Dolmanan, S. B., Ngoo, Y. J., Liu, Y., Bera, M. K., Singh, S. P., Tan, H. R., Bhat, T. N., Chor, E. F.
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Volume:
3
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.007405jss
Date:
March, 2014
File:
PDF, 1.08 MB
english, 2014
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