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Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors
Lam, Kai-Tak, Chin, Sai-Kong, Seah, Da Wei, Kumar, S. Bala, Liang, GengchiauVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.04DJ10
Date:
April, 2010
File:
PDF, 558 KB
english, 2010