High Electron Mobility in Epitaxial Graphene on...

Scientific Reports 2014 / 4 Vol. 4

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Pallecchi, E., Lafont, F., Cavaliere, V., Schopfer, F., Mailly, D., Poirier, W., Ouerghi, A.
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Volume:
4
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/srep04558
Date:
April, 2014
File:
PDF, 958 KB
english, 2014
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