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[IEEE 2012 Lester Eastman Conference on High Performance Devices (LEC) - Providence, RI, USA (2012.08.7-2012.08.9)] 2012 Lester Eastman Conference on High Performance Devices (LEC) - Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al2O3 passivation
Xu, Dong, Chu, Kanin, Diaz, J., Zhu, Wenhua, Roy, R., Seekell, P., Pleasant, L. Mt., Isaak, R., Yang, Xiaoping, Nichols, K., Pritchard, D., Duh, G., Chao, P. C., Xu, Min, Ye, PeideYear:
2012
Language:
english
DOI:
10.1109/lec.2012.6411000
File:
PDF, 408 KB
english, 2012