Low Resistance Al/Si Ohmic Contacts on Boron Implanted...

Japanese Journal of Applied Physics 1983 / 11 Vol. 22; Iss. Part 2, No

Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p + Si Layers Formed by Halogen Lamp Annealing

Hara, Tohru, Ohtsuka, Noboru, Enomoto, Syuichi, Hirayama, Takeshi, Amemiya, Kimio, Furukawa, Masakazu
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Volume:
22
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.22.L683
Date:
November, 1983
File:
PDF, 481 KB
1983
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